rej03g1650-0301 rev.3.01 apr 24, 2008 page 1 of 6 rjk0355dsp silicon n channel power mos fet power switching rej03g1650-0301 rev.3.01 apr 24, 2008 features ? capable of 4.5 v gate drive ? low drive current ? high density mounting ? low on-resistance r ds(on) = 8.5 m ? typ. (at v gs = 10 v) ? pb-free outline renesas package code: prsp0008dd-d (package name: sop-8) 1, 2, 3 source 4 gate 5, 6, 7, 8 drain g d sss d dd 4 1 23 5678 1 2 3 4 5 6 7 8 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 30 v gate to source voltage v gss 20 v drain current i d 12 a drain peak current i d(pulse) note1 96 a body-drain diode reverse drain current i dr 12 a avalanche current i ap note 2 9 a avalanche energy e ar note 2 8.1 mj channel dissipation pch note3 1.8 w channel to ambient thermal impedance ch-a note3 69.4 c/w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. value at tch = 25 c, rg 50 ? 3. when using the glass epoxy board (fr4 40 x 40 x 1.6 mm), pw 10s
rjk0355dsp rej03g1650-0301 rev.3.01 apr 24, 2008 page 2 of 6 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 30 ? ? v i d = 10 ma, v gs = 0 gate to source leak current i gss ? ? 0.1 a v gs = 20 v, v ds = 0 zero gate voltage drain current i dss ? ? 1 a v ds = 30 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.2 ? 2.5 v v ds = 10 v, i d = 1 ma r ds(on) ? 8.5 11.1 m ? i d = 6 a, v gs = 10 v note4 static drain to source on state resistance r ds(on) ? 12.0 16.8 m ? i d = 6 a, v gs = 4.5 v note4 forward transfer admittance |y fs | ? 35 ? s i d = 6 a, v ds = 10 v note4 input capacitance ciss ? 860 ? pf output capacitance coss ? 165 ? pf reverse transfer capacitance crss ? 53 ? pf v ds = 10 v v gs = 0 f = 1 mhz gate resistance rg ? 4.2 ? ? total gate charge qg ? 6.0 ? nc gate to source charge qgs ? 2.3 ? nc gate to drain charge qgd ? 1.4 ? nc v dd = 10 v v gs = 4.5 v i d = 6 a turn-on delay time t d(on) ? 6.9 ? ns rise time t r ? 3.5 ? ns turn-off delay time t d(off) ? 40.2 ? ns fall time t f ? 4.8 ? ns v gs = 10 v, i d = 6 a v dd ? 10 v r l = 1.67 ? rg = 4.7 ? body?drain diode forward voltage v df ? 0.82 1.07 v i f = 12 a, v gs = 0 note3 body?drain diode reverse recovery time t rr ? 20 ? ns i f = 12 a, v gs = 0 di f / dt = 100 a/ s notes: 4. pulse test
rjk0355dsp rej03g1650-0301 rev.3.01 apr 24, 2008 page 3 of 6 main characteristics drain to source voltage v ds (v) drain current i d (a) typical output characteristics drain current i d (a) gate to source voltage v gs (v) drain to source saturation voltage v ds (on) (mv) drain to source saturation voltage vs. gate to source voltage gate to source voltage v gs (v) typical transfer characteristics drain current i d (a) static drain to source on state resistance vs. drain current 20 16 12 8 4 0 246810 20 16 12 8 4 0 12 34 5 tc = 75 c 25 c ?25 c v ds = 10 v pulse test v gs = 2.6 v pulse test 10 3 1 30 300 1 10 100 1000 3 200 150 100 50 0 4 8 12 16 20 pulse test i d = 10 a 5 a 100 30 v gs = 4.5 v 10 v 2.8 v 3.0 v 10 v 3.2 v 4.5 v pulse test 2 a drain to source on state resistance r ds (on) (m ? ) channel dissipation pch (w) ambient temperature ta (c) power vs. temperature derating 4.0 3.0 2.0 1.0 0 50 100 150 200 test condition : when using the glass epoxy board (fr4 40x40x1.6 mm), pw 10 s drain to source voltage v ds (v) drain current i d (a) maximum safe operation area note 5 : when using the glass epoxy board (fr4 40x40x1.6 mm) 100 10 1 0.1 0.01 0.1 0.3 1 3 10 30 100 500 ta = 25 c 1 shot pulse pw = 10 ms 10 s 100 s operation in this area is limited by r ds(on) note 5 dc operation (pw 10 s) 1 ms
rjk0355dsp rej03g1650-0301 rev.3.01 apr 24, 2008 page 4 of 6 case temperature tc ( c) static drain to source on state resistance vs. temperature 50 40 30 20 10 ?25 0 25 50 75 100 125 150 0 i d = 2 a, 5 a, 10 a v gs = 4.5 v 10 v pulse test 2 a, 5 a, 10 a static drain to source on state resistance r ds (on) (m ? ) channel temperature tch ( c) repetitive avalanche energy e ar (mj) maximum avalanche energy vs. channel temperature derating 20 16 12 8 4 25 50 75 100 125 150 0 i ap = 9 a v dd = 15 v duty < 0.1 % rg 50 ? source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage 50 40 30 20 10 0 0.4 0.8 1.2 1.6 2.0 pulse test 5 v v gs = 0, ?5 v 10 v capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage 010 30 20 10000 3000 1000 300 100 30 10 v gs = 0 f = 1 mhz crss coss ciss gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics 50 40 30 20 10 0 20 16 12 8 4 816243240 0 0 i d = 12 a v gs v ds v dd = 25 v 10 v v dd = 25 v 10 v
rjk0355dsp rej03g1650-0301 rev.3.01 apr 24, 2008 page 5 of 6 d. u. t rg i ap monitor v ds monitor v dd 50 ? vin 15 v 0 i d v ds i ap v (br)dss l v dd e ar = l ? i ap 2 ? 2 1 v dss v dss ? v dd avalanche test circuit avalanche waveform vin monitor d.u.t. vin 10 v r l v ds = 10 v t r t d(on) vin 90% 90% 10% 10% vout t d(off) vout monitor 90% 10% t f switching time test circuit switching time waveform rg pulse width pw (s) normalized transient thermal impedance vs. pulse width normalized transient thermal impedance s (t) 10 100 1 m 10 m 100 m 1 10 100 1000 10000 10 1 0.1 0.01 0.001 0.0001 d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse dm p pw t d = pw t ch - f(t) = s (t) x ch - f ch - f = 100 c/w, ta = 25 c when using the glass epoxy board (fr4 40 x 40 x 1.6 mm)
rjk0355dsp rej03g1650-0301 rev.3.01 apr 24, 2008 page 6 of 6 package dimensions p-sop8-3.95 4.9-1.27 0.085g mass[typ.] fp-8dav prsp0008dd-d renesas code jeita package code previous code a 8 5 1 4 f b p c detail f terminal cross section 1.27 1.08 0.40 l 1 0.60 0.25 x 0.46 0.40 0.34 0.10 b p b 1 c 1 0.25 0.20 0.15 max nom min dimension in millimeters symbol reference 5.3 4.90 d 3.95 e 0.14 a 2 6.20 6.10 5.80 0.25 1.75 a 0.75 z l 8 0 c 1.27 e 0.1 y h e a 1 d * 1 * 2 e h e * 3 x m b p e z (ni/pd/au plating) 2. 1. dimensions "*1(nom)" and "*2" do not include mold flash. note) dimension "*3" does not include trim offset. index mark a 1 l 1 l detail f y package name sop-8 ordering information part no. quantity shipping container rjk0355dsp-00-j0 2500 pcs taping
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(http://www.renesas.com ) 5. renesas has used reasonable care in compiling the information included in this document, but renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. when using or otherwise relying on the information in this document, you should evaluate the information in light of the t otal system before deciding about the applicability of such information to the intended application. renesas makes no representations, warranties or guaranties regarding th e suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this do cument or renesas products. 7. with the exception of products specified by renesas as suitable for automobile applications, renesas products are not desi gned, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of h uman injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion co ntrol, aerospace and aeronautics, nuclear power, or undersea communication transmission. if you are considering the use of our products for such purposes, please contact a r enesas sales office beforehand. renesas shall have no liability for damages arising out of the uses set forth above. 8. notwithstanding the preceding paragraph, you should not use renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to us e renesas products in 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in the event of the failure of a renesas product, such as safety design for hardware and software includin g but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. among others, sinc e the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. in case renesas products listed in this document are detached from the products to which the renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. you should implement safety measures so that renesas products may not be easily detached from your products. renesas shall have no liability for damages arising out of such detachment. 12. this document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from r enesas. 13. please contact a renesas sales office if you have any questions regarding the information contained in this document, renes as semiconductor products, or if you have any other inquiries. sales strategic planning div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan http://www.renesas.com refer to " http://www.renesas.com/en/network " for the latest and detailed information. renesas technology america, inc. 450 holger way, san jose, ca 95134-1368, u.s.a tel: <1> (408) 382-7500, fax: <1> (408) 382-7501 renesas technology europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k. tel: <44> (1628) 585-100, fax: <44> (1628) 585-900 renesas technology (shanghai) co., ltd. unit 204, 205, aziacenter, no.1233 lujiazui ring rd, pudong district, shanghai, china 200120 tel: <86> (21) 5877-1818, fax: <86> (21) 6887-7858/7898 renesas technology hong kong ltd. 7th floor, north tower, world finance centre, harbour city, canton road, tsimshatsui, kowloon, hong kong tel: <852> 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to our customers, old company name in catalogs and other documents on april 1 st , 2010, nec electronics corporation merged with renesas technology corporation, and renesas electronics corporation took over all the business of both companies. therefore, although the old company name remains in this document, it is a valid renesas electronics document. we appreciate your understanding. renesas electronics website: http://www.renesas.com april 1 st , 2010 renesas electronics corporation issued by: renesas electronics corporation ( http://www.renesas.com ) send any inquiries to http://www.renesas.com/inquiry .
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